These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Low on-resistance and ultra-low gate charge ideal for high-voltage on-board DC-DC converters up to 2 kW. 100% avalanche tested.
Key Features
- Worldwide best FOM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
