Richardson RFPD, Inc., an Arrow Electronics company, announced today the availability and full design support capabilities for two new 650 V E-mode gallium nitride transistors from GaN Systems Inc.
The new GaN transistors GS-065-060-3-B/T provide low RDS(on) (25 mΩ) and feature a 60 A IDS rating and GaN Systems’ Island Technology® cell layout for high-current die performance and yield. The devices feature an updated design and are offered in GaNPX packaging that enables low inductance and low thermal resistance in a small package.
The GS-065-060-3-B is bottom-side cooled; the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, on-board chargers, uninterruptable power supplies, industrial motor drives and wireless power transfer.
Additional key features of the new GaN transistors include:
- IDS(max): 60 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- High switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small footprint
- Dual gate pads for optimal board layout
About Richardson RFPD
Richardson RFPD, an Arrow Electronics company, is a global leader in the RF, wireless, IoT and power technologies markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production.
