P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in TO-220 package

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These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

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    STP10P6F6

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