Infineon introduces its new 80 V MOSFETs based on OptiMOS™-5 Silicon technology for 48 V applications in new TOLG package for Aluminum core isolated metal substrates (IMS). These products provide an improved robustness regarding TCOB reliability for applications with extremely harsh environment.
Demonstrator: The power stage was developed to support customers during their first steps in designing 48 V inverter for Belt-driven Starter Generator (BSG) application in Mild Hybrid Electrical Vehicles.
Features
Highest current capability per footprint
N-channel – Enhancement mode
Ultra low RDS(on)
100% Avalanche tested
Low package resistance and inductance
Industry’s lowest RDS(on), FOM
Benefits
Higher current capability
Excellent thermal performance in compact form factor
Minimized conduction losses
Lowest switching losses
Less device paralleling
Target applications
(optimized for 48 V applications)
