New Amplifiers and GaN Transistors for Defense, Satellite & Wireless Communications


Announcing the latest additions to Qorvo’s innovative RF portfolio of GaN transistors and amplifiers, which serve a wide range of defense radar, satellite communications and wireless 5G infrastructure systems. These high-performance solutions simplify RF for designers worldwide and are available at Qorvo’s authorized channel partners.


90W, 48V, DC-3.6GHz GaN RF Transistor

QPD0060 Features
  • Freq: DC-3.6GHz
  • Output power (P3dB): 89W
  • Linear gain: 19.5dB
  • Max DE: 75%
  • 7.2×6.6mm DFN package
  • Ideal for wireless infrastructure & military communications
Additional information:

75W, 48V, DC-3.6GHz GaN RF Transistor

QPD0050 Features 
  • Freq: DC-3.6GHz
  • Output power (P3dB): 75W
  • Linear gain: 22dB
  • Max DE: 78%
  • 7.2×6.6mm DFN package
  • Ideal for wireless infrastructure & military communications
Additional information:

High Gain 0.5W Driver Amplifier
QPA9121 Features
  • Freq: 2300-5000MHz
  • 50 ohm matched RF input & output
  • Gain: 28dB
  • Output P3dB: +27dBm
  • 3x3mm QFN package
  • Ideal for TDD & 5G massive MIMO systems
Additional information:

5-6GHz 60W GaN Power Amplifier

QPA2308 Features
  • Freq: 5-6GHz
  • PSAT: 48dBm
  • PAE: 47%
  • Large signal gain: 22dB
  • 15.2×15.2mm bolt-down CP package
  • Ideal for radar & satellite communications
Additional information:

8.5-11GHz 4W GaN Amplifier

QPA1022D Features
  • Freq: 8.5-11GHz
  • PSAT: 36dBm
  • PAE: 45%
  • Power gain: 24dB
  • 2.65×1.25mm die
  • Ideal for radar, EW & communications
Additional information:

28-38GHz 0.4W GaN Power Amplifier
QPA2225D Features
  • Freq: 28-38GHz
  • PSAT: 26dBm
  • Gain: 23dB
  • Flexible DC bias
  • 1.65×0.67mm die
  • Ideal for radar, EW & communications
Additional information:


Additional products to consider...