N-channel 100 V, 0.007 Ohm typ., 70 A STripFET F7 Power MOSFET

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This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

https://www.st.com/content/st_com/en/products/power-transistors/

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    STL90N10F7

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