FERD technology outperforms Schottky diodes

ST field-effect rectifier diodes (FERD) help improve designs with new versions focusing on trade-off upgrades. The design of the FERDs has allowed both a decrease in the voltage drop and a decrease in the leakage current temperature coefficient. As a result, the runaway safety margin is improved and maybe beyond the typical safety margin of Schottky barrier diodes.

Depending on the targeted application and its voltage, developers can now choose the best compromise in terms of forward voltage drop (VF) and leakage current (IR):
– ‘U’ very low forward voltage drop (VF)
– ‘L’ low forward voltage drop (VF)
– ‘M’ & ‘SM’ medium forward voltage drop with optimized leakage current (IR)
– ‘H’ & ‘S’ low leakage current at high temperatures (low IR)

A 30 A, 100 V device now fits in a DPAK package!
For a given package size, our advanced FERD technology allows better density and more efficiency than Schottky barrier devices. The most recent 60 and 100V devices are available in through-hole as well as PowerFLAT™, D²PAK and DPAK versions.
Smaller and more optimized packages allow the design of more compact chargers, adapters and SMPS with less power losses, therefore less heat-sinking.

Field-effect rectifier diodes pack efficiency in a DPAK

Manufacturers of SMPS, photovoltaic systems, LED lighting and chargers have already chosen field-effect rectifier diodes (FERD) for their smaller, more efficient power converters. Outperforming Schottky diodes in power density and efficiency they offer a unique trade-off between low forward voltage drop (V F) and low leakage current (I R). Available in 45V to 100 V ratings, FERDs take the lead for newer systems with smaller enclosures serving both stringent environment and form factors.

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