The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.
The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.
The PWD5F60 accepts a supply voltage (VCC) extending over a wide range (10 V to 20 V) and also features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions.
The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The PWD5F60 embeds two uncommitted comparators available for protections against overcurrent, overtemperature, etc.
The PWD5F60 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact VFQFPN package.
Key Features
- Power system-in-package integrating gate drivers and high-voltage power MOSFETs
- RDS(ON) = 1.38 Ω
- BVDSS = 600 V
- Suitable for operating as
- full bridge
- dual independent half bridges
- UVLO protection on low-side and high-side
- 3.3 V to 15 V compatible inputs with hysteresis and pull-down
- Internal bootstrap diode
- Uncommitted comparators
- Adjustable dead-time
- Bill of material reduction
- Very compact and simplified layout
- Flexible, easy and fast design
