This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
With a best-in-class gate charge (Qg) and ultra-low RDS(on), our STD3N95K5AG 950 V STPOWER™ MDmesh™ K5 MOSFET is the right solution for auxiliary power supplies in EV/HEV applications.
