ROHM announced the availability of six new trench gate structure SiC MOSFETs (650V/1200V), the SCT3xxx xR-Serie, ideal for server power supplies, UPS systems, solar power inverters, and EV charging stations requiring high efficiency.
The SCT3xxx xR series utilizes a 4-pin package (TO-247-4L) that maximizes switching performance, making it possible to reduce switching loss by up to 35% over conventional 3-pin package types (TO-247N). This contributes to lower power consumption in a variety of applications.
In recent years, the growing needs for cloud services due to the proliferation of AI and IoT has increased the demand for data centers worldwide. But for servers used in data centers, one major challenge is how to reduce power consumption as capacity and performance increase. At the same time, SiC devices are attracting attention due to their smaller loss over mainstream silicon devices in the power conversion circuits of servers. Furthermore, as the TO-247-4L package enables to reduce switching loss over conventional packages, it is expected to be adopted in high output applications such as servers, base stations, and solar power generation.
In 2015 ROHM became the first supplier to successfully mass-produce trench-type SiC MOSFETs, and continues to lead the industry in product development. In addition to these newest 650V/1200V high efficiency SiC MOSFETs, we are committed to developing innovative devices and propose solutions that contribute to lower power consumption in a variety of devices, including gate driver ICs optimized for SiC drive.
ROHM also proposes solutions that facilitate application evaluation, including an SiC MOSFET evaluation board, P02SCT3040KR-EVK-001, equipped with gate driver ICs (BM6101FV-C) along with multiple power supply ICs and discrete components optimized for SiC device drive.