Murata 3D Silicon Capacitors are now available

Murata high-density silicon capacitors are developed with a semiconductor MOS process and are using the third dimension to substantially increase the capacitor surface and thus its capacitance without increasing the capacitor footprint. Murata silicon technology is based on a monolithic structure embedded in a monocristalline substrate (single MIM and multi MIM – Metal Insulator Metal).

Higher performance in a smaller package
This advanced 3D topology gives a developed area equivalent to 80 ceramic layers in an amazing 100 µm thickness (lower value on request) of active capacitance area. Thanks to a very linear and low dispersive dielectric, miniaturization, capacitance value and electrical performances are optimized.

Market segments addressed
Networking (RF power and broadband), high reliability, medical, automotive and communications.

The Murata Silicon Technology is one of the fastest growing technologies offering highly flexible integration of passives such as High-Q inductors, resistors, planar MIM capacitors and trench MOS capacitors for baluns, PLL loop filtering, low pass filtering, RC filtering, supply line decoupling, etc.

This technology provides a fully MOS compatible back-end technology for a full passive integration platform that can be further hetero-integrated Multiple-Chip-Module or flip-chip with other technologies (CMOS, MEMS, etc.) in a SIP.